Everything about Multigate device
MOS field-effect transistor with more than one gate
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors. Wikipedia →
🧭 Start here: a 6-step reading path
- Read the overview: Multigate deviceA 5-minute orientation
- Skim a recent paper: Radiation Hardness on Dielectric/Ferroelectric Stacked Negative Capacitance Multigate Metal–Oxide–Semiconductor FETs at Sub-3-nm Technology Node: Device to CMOS Inverter LayoutInfluential work since 2022
- Pick up a classic book: High-K Materials in Multi-Gate FET DevicesThe most-reprinted book on the subject
- Read the landmark paper: Parasitic Capacitance Analytical Model for Sub-7-nm Multigate DevicesCited 20 times
- Go sideways: Fin field-effect transistorA closely related topic
- Go sideways: 5 nm processA closely related topic
📖 Definitions
No dictionary entry for this exact phrase.
🗂️ The subject at a glance
🏆 Landmark papers (most cited)
Parasitic Capacitance Analytical Model for Sub-7-nm Multigate Devices
On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD
2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application
Doping-less MultiGate Inverted-T shape FET device with Schottky source/drain contacts
Ultra-thin films and multigate devices architectures for future CMOS scaling
🆕 Influential since 2022
📚 Books worth reading
- 📕High-K Materials in Multi-Gate FET DevicesShubham Tayal, Parveen Singla · 2021
- 📕Frontiers in ElectronicsBenjamin Iñiguez · 2014
- 📕EDMO2003Fla.) International Symposium on Electron Devices for Microwave and Optoelectronic Applications (11th 2003 Orlando · 2003
Ranked by number of editions on Open Library, a rough measure of how lasting a book is.
🔗 Related topics
- Fin field-effect transistor A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the…
- 5 nm process In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the "5 nm" process as the MOSFET technology node following the…
- List of semiconductor scale examples Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturi…
- 2 nm process In semiconductor manufacturing, the 2 nm process is the MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node…
- 3 nm process In semiconductor manufacturing, the "3 nm process" is the next die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology…
- Nanocircuitry Nanocircuits are electrical circuits operating on the nanometer scale where quantum mechanical effects become important. One nanometer is equal to 10−9…
- 14 nm process The 14 nanometer process is a marketing term for the MOSFET technology node that is the successor to the 22 nm (or 20 nm) node. The 14 nm was so named…
- International Electron Devices Meeting The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for…